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500ma low noise ldo regulator ap2213 data sheet 1 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited general description the ap2213 is a 500ma output current fixed voltage regulator which provides low noise, very low dropout voltage (typically 350mv at 500ma), very low standby current (1 a maximum) and excellent power supply ripple rejection (psrr 75db at 100hz) in bat- tery powered applications, such as handsets and pdas and in noise sensitive appl ications, such as rf elec- tronics. the ap2213 features individual logic compatible enable/shutdown control inputs, a low power shut- down mode for extended battery life, over current pro- tection, over temperatur e protection, as well as reversed-battery protection. the ap2213 has 2.5v, 3.0v and 3.3v versions. the ap2213 is available in to-252-2 (1), soic-8 and sot-223 packages. features up to 500ma output current low standby current low dropout voltage: v drop =350mv at 500ma high output accuracy: 1% good ripple rejection ability: 75db at 100hz and i out =100 a tight load and line regulation low temperature coefficient over curren t protection thermal protection reversed-battery protection logic-controlled enable applications laptop, notebook, and palmtop computer cd-rom, cd-r/rw, dvd driver portable electronic pc peripheral figure 1. package types of ap2213 soic-8 to-252-2 (1) sot-223
500ma low noise ldo regulator ap2213 data sheet 2 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited pin descrition pin number pin name function to-252-2 (1) soic-8 sot-223 3 3 2 vout regulated output voltage 2 5, 6, 7, 8 1 gnd ground 1 2 3 vin input voltage 1en enable input: cmos or t tl compatible input. logic high=enable, logic low=shutdown 4 byp bypass capacitor for low noise operation figure 2. pin configuration of ap2213 (top view) pin configuration m package (soic-8) d package (to-252-2 (1)) h package (sot-223) vout gnd vin 1 2 3 1 2 3 4 8 7 6 5 vout gnd vin gnd gnd gnd byp en vin vout gnd 1 2 3
500ma low noise ldo regulator ap2213 data sheet 3 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited + - bandgap ref. current limit thermal shutdown v in byp en gnd v out functional block diagram figure 3. functional block diagram of ap2213 a for to-252-2 (1) b for soic-8 1 (2) (3) 2 (5, 6, 7, 8) (1) (1) (4) 3 (3) (2) a (b) (c) c for sot-223
500ma low noise ldo regulator ap2213 data sheet 4 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited package temperature range part number marking id packing type lead free green lead free green to-252-2 (1) -40 to 125 o c ap2213d-2.5e1 ap2213d-2.5g1 ap2213d-2.5e1 ap2213d-2.5g1 tube ap2213d-2.5tre1 ap2213d-2.5trg1 ap2213d-2.5e1 ap2213d-2.5g1 tape & reel ap2213d-3.0e1 ap2213d-3.0g1 ap2213d-3.0e1 ap2213d-3.0g1 tube ap2213d-3.0tre1 ap2213d-3.0trg1 ap2213d-3.0e1 ap2213d-3.0g1 tape & reel ap2213d-3.3e1 ap2213d-3.3g1 ap2213d-3.3e1 ap2213d-3.3g1 tube ap2213d-3.3tre1 ap2213d-3.3trg1 ap2213d-3.3e1 ap2213d-3.3g1 tape & reel soic-8 -40 to 125 o c ap2213m-2.5e1 ap2213m-2.5g1 2213m-2.5e1 2213m-2.5g1 tube ap2213m-2.5tre1 ap2213m-2.5trg1 2213m-2.5e1 2213m-2.5g1 tape & reel ap2213m-3.0e1 ap2213m-3.0g1 2213m-3.0e1 2213m-3.0g1 tube ap2213m-3.0tre1 ap2213m-3.0trg1 2213m-3.0e1 2213m-3.0g1 tape & reel ap2213m-3.3e1 ap2213m-3.3g1 2213m-3.3e1 2213m-3.3g1 tube ap2213m-3.3tre1 ap2213m-3.3trg1 2213m-3.3e1 2213m-3.3g1 tape & reel sot-223 -40 to 125 o c ap2213h-2.5tre1 ap2213h-2.5trg1 eh13c gh13c tape & reel ap2213h-3.0tre1 ap2213h-3.0trg1 eh13e gh13e tape & reel ap2213h-3.3tre1 ap2213h-3.3trg1 eh13f gh13f tape & reel circuit type package e1: lead free ap2213 - tr: tape and reel blank: tube ordering information 2.5: fixed output 2.5v 3.0: fixed output 3.0v 3.3: fixed output 3.3v m: soic-8 d: to-252-2 (1) g1: green bcd semiconductor's pb-free products, as designated with "e1" suffix in the part number, are rohs compliant. products with "g1" suffix are available in green packages. h: sot-223
500ma low noise ldo regulator ap2213 data sheet 5 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited parameter symbol value unit supply input voltage v in 20 v enable input voltage v en 20 v power dissipation p d internally limited (thermal protection) w lead temperature (soldering, 10sec) t lead 260 o c junction temperature t j 150 o c storage temperature t stg -65 to 150 o c esd (machine model) esd 300 v thermal resistance (no heatsink) ja to-252-2 (1) 90 o c/w soic-8 160 sot-223 108 note 1: stresses greater than those listed under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. exposure to "absolute max- imum ratings" for extended periods may affect device reliability. parameter symbol min max unit supply input voltage v in 2.5 18 v enable input voltage v en 018v operating junction temperature t j -40 125 o c recommended operating conditions absolute maximum ratings (note 1)
500ma low noise ldo regulator ap2213 data sheet 6 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit output voltage accuracy ? v out /v out variation from specified v out -1 1 % -2 2 output voltage temperature coefficient (note 3) ? v out / ? t 120 v/ o c ( ? v out /v out )/ ? t 48 ppm/ o c line regulation v rline v in = 3.5v to 13.2v 1.5 4.5 mv 12 load regulation (note 4) v rload i out = 0.1ma to 500ma 17 mv 17 dropout voltage (note 5) v drop i out =100 a 15 50 mv 70 i out =50ma 110 150 230 i out =100ma 140 250 300 i out =150ma 165 275 350 i out =300ma 250 400 500 i out =500ma 350 600 700 standby current i std v en 0.4v (shutdown) 0.01 1 a v en 0.18v (shutdown) 5 ground pin current (note 6) i gnd v en 2.0v, i out =100 a 100 150 a 180 v en 2.0v, i out =50ma 350 600 800 v en 2.0v, i out =150ma 1.3 1.9 ma 2.5 v en 2.0v, i out =300ma 410 15 v en 2.0v, i out =500ma 11 20 28 v in =3.5v, i out =100 a, c in =1.0 f, c out =2.2 f, v en 2.0v, t j =25 o c, bold typeface applies over - 40 o c t j 125 o c (note 2), unless otherwise specified. electrical characteristics ap2213-2.5 electrical characteristics
500ma low noise ldo regulator ap2213 data sheet 7 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit ripple rejection psrr f=100hz, i out =100 a75db current limit i limit v out =0v 700 1000 ma output noise e no i out =50ma, c out =2.2 f, 100pf from byp to gnd 260 enable input logic-low voltage v il regulator shutdown 0.4 v 0.18 enable input logic-high voltage v ih regulator enabled 2.0 v enable input logic-low current i il v il 0.4v 0.01 1 a v il 0.18v 2 enable input logic-high current i ih v il 2.0v 5 20 a v il 2.0v 25 thermal resistance jc to-252-2 (1) 20 o c/w soic-8 45 sot-223 31 hz nv / note 2: specifications in bold type are limited to -40 o c t j 125 o c. limits over temperature are guaranteed by design, but not tested in production. note 3: output voltage temperature coeffi cient is defined as the worst case voltage change divided by the total temperature range. note 4: regulation is measured at consta nt junction temperature using low duty cycl e pulse testing. parts are tested for load regulation in the load range from 0.1ma to 500ma. changes in output vo ltage due to heating effect s are covered by the thermal regulation specification. note 5: dropout voltage is defined as the input to output differential at which the output voltage drops 1% (t j =25 o c) or 2% (- 40 o c t j 125 o c) below its nominal value measured at 1v differential. note 6: ground pin current is the regulator quiescent current plus pass transistor base current. the total current drawn from t he electrical characteristics (continued) v in =3.5v, i out =100 a, c in =1.0 f, c out =2.2 f, v en 2.0v, t j =25 o c, bold typeface applies over - 40 o c t j 125 o c (note 2), unless otherwise specified. ap2213-2.5 electrical characteristics
500ma low noise ldo regulator ap2213 data sheet 8 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited v in =4v, i out =100 a, c in =1.0 f, c out =2.2 f, v en 2.0v, t j =25 o c, bold typeface applies over - 40 o c t j 125 o c (note 2), unless otherwise specified. ap2213-3.0 electrical characteristics electrical characteristics (continued) parameter symbol conditions min typ max unit output voltage accuracy ? v out /v out variation from specified v out -1 1 % -2 2 output voltage temperature coefficient (note 3) ? v out / ? t 120 v/ o c ( ? v out /v out )/ ? t 40 ppm/ o c line regulation v rline v in = 4v to 13.2v 1.5 4.5 mv 12 load regulation (note 4) v rload i out = 0.1ma to 500ma 18 mv 17 dropout voltage (note 5) v drop i out =100 a 15 50 mv 70 i out =50ma 110 150 230 i out =100ma 140 250 300 i out =150ma 165 275 350 i out =300ma 250 400 500 i out =500ma 350 600 700 standby current i std v en 0.4v (shutdown) 0.01 1 a v en 0.18v (shutdown) 5 ground pin current (note 6) i gnd v en 2.0v, i out =100 a 100 150 a 180 v en 2.0v, i out =50ma 350 600 800 v en 2.0v, i out =150ma 1.3 1.9 ma 2.5 v en 2.0v, i out =300ma 410 15 v en 2.0v, i out =500ma 11 20 28
500ma low noise ldo regulator ap2213 data sheet 9 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited note 2: specifications in bold type are limited to -40 o c t j 125 o c. limits over temperature are guaranteed by design, but not tested in production. note 3: output voltage temperature coeffi cient is defined as the worst case voltage change divided by the total temperature range. note 4: regulation is measured at consta nt junction temperature using low duty cycl e pulse testing. parts are tested for load regulation in the load range from 0.1ma to 500ma. changes in output vo ltage due to heating effect s are covered by the thermal regulation specification. note 5: dropout voltage is defined as the input to output differential at which the output voltage drops 1% (t j =25 o c) or 2% (- 40 o c t j 125 o c) below its nominal value measured at 1v differential. note 6: ground pin current is the regulator quiescent current plus pass transistor base current. the total current drawn from t he supply is the sum of the load cu rrent plus the ground pin current. electrical characteristics (continued) v in =4v, i out =100 a, c in =1.0 f, c out =2.2 f, v en 2.0v, t j =25 o c, bold typeface applies over - 40 o c t j 125 o c (note 2), unless otherwise specified. ap2213-3.0 electrical characteristics parameter symbol conditions min typ max unit ripple rejection p srr f=100hz, i out =100 a75db current limit i limit v out =0v 700 1000 ma output noise e no i out =50ma, c out =2.2 f, 100pf from byp to gnd 260 enable input logic-low voltage v il regulator shutdown 0.4 v 0.18 enable input logic-high voltage v ih regulator enabled 2.0 v enable input logic-low current i il v il 0.4v 0.01 1 a v il 0.18v 2 enable input logic-high current i ih v il 2.0v 5 20 a v il 2.0v 25 thermal resistance jc to-252-2 (1) 20 o c/w soic-8 45 sot-223 31 hz nv /
500ma low noise ldo regulator ap2213 data sheet 10 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit output voltage accuracy ? v out /v out variation from specified v out -1 1 % -2 2 output voltage temperature coefficient (note 3) ? v out / ? t 120 v/ o c ( ? v out /v out )/ ? t 36.3 ppm/ o c line regulation v rline v in = 4.3v to 13.2v 1.5 4.5 mv 12 load regulation (note 4) v rload i out = 0.1ma to 500ma 19 mv 18 dropout voltage (note 5) v drop i out =100 a 15 50 mv 70 i out =50ma 110 150 230 i out =100ma 140 250 300 i out =150ma 165 275 350 i out =300ma 250 400 500 i out =500ma 350 600 700 standby current i std v en 0.4v (shutdown) 0.01 1 a v en 0.18v (shutdown) 5 ground pin current (note 6) i gnd v en 2.0v, i out =100 a 100 150 a 180 v en 2.0v, i out =50ma 350 600 800 v en 2.0v, i out =150ma 1.3 1.9 ma 2.5 v en 2.0v, i out =300ma 410 15 v en 2.0v, i out =500ma 11 20 28 v in =4.3v, i out =100 a, c in =1.0 f, c out =2.2 f, v en 2.0v, t j =25 o c, bold typeface applies over - 40 o c t j 125 o c (note 2), unless otherwise specified. ap2213-3.3 electrical characteristics electrical characteristics (continued)
500ma low noise ldo regulator ap2213 data sheet 11 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit ripple rejection psrr f=100hz, i out =100 a75db current limit i limit v out =0v 700 1000 ma output noise e no i out =50ma, c out =2.2 f, 100pf from byp to gnd 260 enable input logic-low voltage v il regulator shutdown 0.4 v 0.18 enable input logic-high voltage v ih regulator enabled 2.0 v enable input logic-low current i il v il 0.4v 0.01 1 a v il 0.18v 2 enable input logic-high current i ih v il 2.0v 5 20 a v il 2.0v 25 thermal resistance jc to-252-2 (1) 20 o c/w soic-8 45 sot-223 31 hz nv / note 2: specifications in bold type are limited to -40 o c t j 125 o c. limits over temperature are guaranteed by design, but not tested in production. note 3: output voltage temperature coeffi cient is defined as the worst case voltage change divided by the total temperature range. note 4: regulation is measured at consta nt junction temperature using low duty cycl e pulse testing. parts are tested for load regulation in the load range from 0.1ma to 500ma. changes in output vo ltage due to heating effect s are covered by the thermal regulation specification. note 5: dropout voltage is defined as the input to output differential at which the output voltage drops 1% (t j =25 o c) or 2% (- 40 o c t j 125 o c) below its nominal value measured at 1v differential. note 6: ground pin current is the regulator quiescent current plus pass transistor base current. the total current drawn from t he supply is the sum of the load cu rrent plus the ground pin current. electrical characteristics (continued) v in =4.3v, i out =100 a, c in =1.0 f, c out =2.2 f, v en 2.0v, t j =25 o c, bold typeface applies over - 40 o c t j 125 o c (note 2), unless otherwise specified. ap2213-3.3 electrical characteristics
500ma low noise ldo regulator ap2213 data sheet 12 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited typical performance characteristics figure 4. output voltage vs. junction temperature figure 5. dropout voltage vs. junction temperature figure 6. ground pin current vs. output current figure 7. ground pin current vs. junction temperature -60 -40 -20 0 20 40 60 80 100 120 140 2.484 2.486 2.488 2.490 2.492 2.494 2.496 2.498 2.500 2.502 output voltage (v) junction temperature ( o c) ap2213-2.5 v in =3.5v, i out =10ma c in =1 f, c out =2.2 f -60 -40 -20 0 20 40 60 80 100 120 140 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 dropout voltage (mv) junction temperature ( o c) i out =50ma i out =100ma i out =150ma i out =300ma i out =500ma c in =1 f, c out = 2.2 f 0 100 200 300 400 500 0 1 2 3 4 5 6 7 8 9 10 ground pin current (ma) output current ( ma) t a =25 o c c in =1 f, c out =2.2 f -60 -40 -20 0 20 40 60 80 100 120 140 0 2 4 6 8 10 12 14 16 18 20 ground pin current (ma) junction temperature ( 0 c) i out =50ma i out =100ma i out =150ma i out =300ma i out =500ma ap2213-2.5 v in =3.5v, c in =1 f, c out =2.2 f
500ma low noise ldo regulator ap2213 data sheet 13 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited typical performance ch aracteristics (continued) figure 8. enable current vs. junction temperature figure 9. enable voltage vs. junction temperature figure 10. output noise vs. frequency -60 -40 -20 0 20 40 60 80 100 120 140 2 3 4 5 6 7 8 9 10 11 12 13 v en =1.8v v en =2v v en =3v v en =3.7v enable current ( a) junction temperature ( o c) ap2213-2.5, v in =3.5v c in =1 f, c out =2.2 f, i out =100 a -60 -40 -20 0 20 40 60 80 100 120 140 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 v en =logic high v en =logic low enable voltage (v) junction temperature ( o c) ap2213-2.5 c in =1 f, c out =2.2 f i out =100 a, v in =3.5v 10 100 1k 10k 100k 1m 10m 100 10 1 0.1 0.01 0.001 frequency (hz) ap2213-2.5 i out =10ma, c in =1 f, c out =2.2 f v in =3.5v, c byp =100pf 0.0001 output noise ( ) v/ hz figure 11. line transient (conditions: v in =3.4 to 4.4v, v en =2v, i out =100 a, time (200 s/div) ap2213-2.5 3.5 4.5 0 ? v out (10mv/div) v in (1v/div) 10 c byp =100pf, c out =2.2 f ) 2.5 5.5 -10 -20
500ma low noise ldo regulator ap2213 data sheet 14 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited figure 13. v en vs. v out (conditions: v en =0 to 2v, v in =3.5v, i out =30ma, c byp =open, c in =1 f , c out =2.2 f ) v en (1v/div) time (40 s/div) ap2213-2.5 0 1 0 1 typical performance ch aracteristics (continued) figure 12. load transient (conditions: v in =3.5v, c byp =100pf, v en =2v, i out (0.5a/div) ? v out (10mv/div) time (200 s/div) ap2213-2.5 -10 0 0 0.5 v out (1v/div) figure 14. psrr vs. frequency 10ma i out =10 to 500ma, c in =1 f, c out =2.2 f ) 1 -0.5 -20 -30 2 3 2 -1 10 100 1k 10k 100k 1m 0 10 20 30 40 50 60 70 80 90 100 psrr (db) frequency (hz) ap2213-2.5 v in =3.5v, v ripple =1v pp i out =10ma, c out =2.2 f figure 15. power dissipation vs. ambient temperature 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 power dissipation (w) ambient temperature ( o c) to-252-2(1) package no heatsink
500ma low noise ldo regulator ap2213 data sheet 15 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited typical performance ch aracteristics (continued) figure 16. power dissipation vs. ambient temperature figure 17. esr vs. output current figure 18. esr vs. output current 0 50 100 150 200 250 300 350 400 450 500 0.01 0.1 1 10 100 1000 esr ( ? ) output current (ma) c out =1 f no bypass capacitor stable area 0 50 100 150 200 250 300 350 400 450 500 0.01 0.1 1 10 100 1000 esr ( ? ) output current (ma) c out =2.2 f no bypass capacitor stable area 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 power dissipation (w) ambient temperature ( o c) soic-8 package no heatsink figure 19. esr vs. output current 0 50 100 150 200 250 300 350 400 450 500 0.01 0.1 1 10 100 1000 esr ( ? ) output current (ma) c out =4.7 f no bypass capacitor stable area
500ma low noise ldo regulator ap2213 data sheet 16 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited figure 20. typical application of ap2213 (note 7) typical application byp 100pf en gnd ap2213-2.5 v in =3.5v v out =2.5v 2.2 f 1 f v in v in v out v out c out c byp c in note 7: dropout voltage is 350mv when t a =25 o c. in order to obtain a normal output voltage, v out +0.35v is the minimum input voltage which will results a low ps rr, imposing a bad influence on system. therefore, th e recommended input voltage is v out +1v to 18v. for ap2213-2.5 version, it s input voltage can be set from 3.5v(v out +1v) to 18v.
17 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 500ma low noise ldo regulator ap2213 data sheet input capacitor a 1 f minimum capacitor is recommended to be placed between v in and gnd. output capacitor it is required to prevent oscillation. 1 f minimum is recommended when c byp is unused. 2.2 f mini- mum is recommended when c byp is 100pf. the out- put capacitor may be increas ed to improve transient response. noise bypass capacitor bypass capacitor is connected to the internal voltage reference. a small capacito r connected from byp to gnd make this reference quiet, resulting in a significant reduction in output noise, but the esr stable area will be narrowed. in order to keep the output stability, it is recommended to use the bypass capacitor no more than 100pf. the start-up speed of the ap2213 is inversely proportional to the value of reference bypass capacitor. in some cases, if output noise is not a major concern and rapid turn-on is necessary, omit c byp and leave byp open. power dissipation thermal shutdown may take place if exceeding the maximum power dissipation in application. under all possible operating conditions, the junction tempera- ture must be within the range specified under abso- lute maximum ratings to avoid thermal shutdown. to determine if the power dissipated in the regulator reaches the maximum power dissipation (see figure 16, 17), using: t j = p d * ja + t a p d =(v in -v out )*i out +v in *i gnd where: t j t j(max) , t j(max) is absolute maximum rat- ings for the junction temperature; v in *i gnd can be ignored due to its small value. t j(max) is 150 o c, ja is 90 o c/w for to-252-2 (1) package and 160 o c/w for soic-8 package. example: for 2.5v versio n packaged in soic-8, i out =500ma, t a =50 o c, v in(max) is: (150 o c-50 o c)/(0.5a*160 o c/w)+2.5v=3.75v therefore, for good performance, please make sure that input voltage is less than 3.75v without heatsink when t a =50 o c. application information
500ma low noise ldo regulator ap2213 data sheet 18 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited mechanical dimensions unit: mm(inch) to-252-2 (1) 1.350(0.053) 1.650(0.065) 0.600(0.024) 0.900(0.035) 4.500(0.177) 4.700(0.185) 3 4 3.800ref(0.150ref) 4.800(0.189) 6.500(0.256) 4.300(0.169) 5.400(0.212) 1.400(0.055) 1.780(0.070) 0.000(0.000) 0.127(0.005) 0.430(0.017) 0.580(0.023) 2.300typ 9.500(0.374) 9.900(0.390) 0.700(0.028) 0.900(0.035) 0.500(0.020) 0.700(0.028) 5.200(0.205) 5.400(0.213) 6.350(0.250) 6.650(0.262) 2.550(0.100) 2.900(0.114) 5.400(0.213) 5.700(0.224) 2.200(0.087) 2.400(0.094) 5 5 8 0.430(0.017) 0.580(0.023)
19 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 500ma low noise ldo regulator ap2213 data sheet mechanical dimens ions (continued) soic-8 unit: mm(inch) 0 8 1 5 r 0 . 1 5 0 ( 0 . 0 0 6 ) r0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 1.350(0.053) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 7 7 2 0 : 1 d 1.270(0.050) typ 0.190(0.007) 0.250(0.010) 8 d 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) 8 0.450(0.017) 0.800(0.031) 4.700(0.185) 5.100(0.201) note: eject hole, oriented hole and mold mark is optional.
500ma low noise ldo regulator ap2213 data sheet 20 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited mechanical dimensions (continued) sot-223 unit: mm(inch) 3.300(0.130) 3.700(0.146) 6.700(0.264) 7.300(0.287) 2.900(0.114) 3.100(0.122) 0.610(0.024) 0.810(0.032) 2.300(0.091) typ 6.300(0.248) 6.700(0.264) 1.750(0.069) typ 4.500(0.177) 4.700(0.185) 0.020(0.001) 0.100(0.004) 1.520(0.060) 1.800(0.071) 1.500(0.059) 1.700(0.067) 0 . 2 5 0 ( 0 . 0 1 0 ) 0 . 3 5 0 ( 0 . 0 1 4 ) 0.250(0.010) 0 10 0.900(0.035) min
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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